CoolSiC™ 650V G2 MOSFET

Infineon Technologies  CoolSiC™ 650V G2 MOSFET ay gumagamit ng mga kakayahan sa pagganap ng silicon carbide sa pamamagitan ng pagpapagana ng mas mababang pagkawala ng enerhiya, na nagsasalin sa mas mataas na kahusayan sa panahon ng conversion ng kuryente. Maraming naitutulong ang Infineon CoolSiC 650V G2 MOSFET para sa iba't ibang power semiconductor application gaya ng photovoltaics, energy storage, DC EV charging, mga motor drive, at industrial power supply. Kapag may CoolSiC G2 ang isang DC fast charging station na para sa mga electric vehicle, hanggang 10% na less ang power loss kaysa sa mga naunang generation habang nagiging mas mataas ang charging capacity nang hindi nakokompromiso ang mga form factor.

Mga Resulta: 53
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Pangalang pangkalakal
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1,920May Stock
Min.: 1
Mult.: 1
: 2,000

SMD/SMT HSOF-8 1 Channel 650 V 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 440 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 256May Stock
Min.: 1
Mult.: 1
: 1,000

SMD/SMT 1 Channel 650 V 158 A 13.1 mOhms - 7 V, + 23 V 5.6 V 112 nC - 55 C + 175 C 535 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 738May Stock
Min.: 1
Mult.: 1
: 1,000

SMD/SMT 1 Channel 650 V 68 A 33 mOhms - 7 V, + 23 V 5.6 V 42 nC - 55 C + 175 C 263 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 280May Stock
Min.: 1
Mult.: 1
: 1,000

SMD/SMT 1 Channel 650 V 58 A 41 mOhms - 7 V, + 23 V 5.6 V 34 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? 416May Stock
Min.: 1
Mult.: 1
: 1,000

SMD/SMT 1 Channel 650 V 34.9 A 73 mOhms - 7 V, + 23 V 5.6 V 18 nC - 55 C + 175 C 148 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 788May Stock
Min.: 1
Mult.: 1
: 1,000

SMD/SMT TO-263-7 1 Channel 650 V 28 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC + 175 C 124 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 901May Stock
Min.: 1
Mult.: 1
: 750

SMD/SMT HDSOP-22 1 Channel 650 V 94 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 499 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 489May Stock
Min.: 1
Mult.: 1
: 750

SMD/SMT HDSOP-22 1 Channel 650 V 97 A 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 394 W Enhancement
Infineon Technologies SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling 773May Stock
3,600Inaasahan 11/5/2026
Min.: 1
Mult.: 1
: 1,800

SMD/SMT 1 Channel 650 V 82 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling 909May Stock
1,800Inaasahan 1/7/2027
Min.: 1
Mult.: 1
: 1,800

SMD/SMT 1 Channel 650 V 68 A 41 mOhms - 10 V, + 25 V 5.6 V 34 nC - 55 C + 175 C 312 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 826May Stock
Min.: 1
Mult.: 1
: 1,800

SMD/SMT HDSOP-16 1 Channel 650 V 34.7 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 187 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1,779May Stock
2,000Inaasahan 7/22/2027
Min.: 1
Mult.: 1
: 2,000

SMD/SMT HSOF-8 1 Channel 650 V 68 A 41 mOhms - 7 V, + 23 V 5.6 V 34 nC - 55 C + 175 C 312 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 2,858May Stock
Min.: 1
Mult.: 1
: 2,000

SMD/SMT HSOF-8 1 Channel 650 V 41.4 A 73 mOhms - 7 V, + 23 V 5.6 V 19 nC - 55 C + 175 C 208 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 911May Stock
Min.: 1
Mult.: 1
: 2,000

TOLL-8 650 V 75 mOhms
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 750 V G2 1,958May Stock
Min.: 1
Mult.: 1
: 2,000

SMD/SMT PG-LHSOF-4 650 V 79 A 33 mOhms - 7 V to + 23 V 5.6 V 42 nC - 55 C + 175 C 357 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V G2 1,658May Stock
Min.: 1
Mult.: 1
: 2,000

SMD/SMT PG-LHSOF-4 650 V 68 A 41 mOhms - 7 V to + 23 V 5.6 V 34 nC - 55 C + 175 C 315 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2 221May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 650 V 130 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 26 mohm G2 538May Stock
240Inaasahan 9/16/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 650 V 64 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 60 mohm G2 278May Stock
480Inaasahan 9/1/2027
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 650 V 32.8 A 73 mOhms - 10 V, + 25 V 5.6 V 19 nC - 55 C + 175 C 130 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 486May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 10,334May Stock
Min.: 1
Mult.: 1
: 2,000

SMD/SMT TO-263-7 1 Channel 20 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 682May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 650 V 210 A 8.5 mOhms - 18 V, + 18 V 5.6 V 439 nC - 55 C + 175 C 625 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 9May Stock
3,000Inoorder
Min.: 1
Mult.: 1
: 750

SMD/SMT HDSOP-22 1 Channel 650 V 154 A 13.1 mOhms - 7 V, + 23 V 5.6 V 113 nC - 55 C + 175 C 651 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 10May Stock
2,000Inaasahan 8/12/2027
Min.: 1
Mult.: 1
: 2,000

SMD/SMT HSOF-8 1 Channel 650 V 168 A 13.1 mOhms - 7V, + 23 V 4.5 V 113 nC - 55 C + 175 C 681 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 21May Stock
2,000Inaasahan 5/20/2027
Min.: 1
Mult.: 1
: 2,000

SMD/SMT HSOF-8 1 Channel 650 V 81 A 33 mOhms 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement