DMWSH120Hx 1200V N-Channel Power MOSFETs

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs are silicon carbide MOSFETs designed to minimize the on-state resistance and maintain excellent switching performance. These MOSFETs feature low input capacitance, up to 100μA zero gate voltage drain current, up to ±250nA gate-source leakage, and a high BVDSS rating for power applications. The DMWSH120Hx MOSFETs operate within the -55°C to 175°C temperature range and comply with the UL 94V-0 flammability classification rating. These power MOSFETs are ideal for EV high-power DC-DC converters, EV charging systems, solar inverters, AC-DC traction inverters, and automotive motor drivers.

Mga Resulta: 10
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode
Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS 20May Stock
₱1,985.29
₱1,337.43
₱1,222.09
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 97.4 A 28.5 mOhms - 8 V, + 19 V 3.6 V 175 nC - 55 C + 175 C 405 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS 17May Stock
₱1,985.29
₱1,337.43
₱1,239.27
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 100 A 28.5 mOhms - 8 V, + 19 V 3.6 V 173.7 nC - 55 C + 175 C 429 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS 20May Stock
₱2,346.64
₱1,618.41
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 100 A 28.5 mOhms - 8 V, + 19 V 2.5 V 173.7 nC - 55 C + 175 C 429 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS 31May Stock
₱1,183.44
₱712.27
₱668.72
Min.: 1
Mult.: 1
Through Hole To-247-3 1 Channel 1.2 kV 72.7 A 43 mOhms - 8 V, + 19 V 2.5 V 105 nC - 55 C + 175 C 341 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS 78May Stock
₱769.33
₱436.20
₱403.68
₱392.03
₱376.08
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 41 A 97.5 mOhms - 4 V, + 15 V 3.5 V 50.9 nC - 55 C + 170 C 246 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS 60May Stock
₱949.08
₱546.63
₱507.98
₱504.91
₱490.80
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 41 A 97.5 mOhms - 4 V, + 15 V 3.5 V 50.9 nC - 55 C + 175 C 246 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS 87May Stock
₱769.33
₱436.20
₱435.59
₱392.03
₱351.54
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 40 A 97.5 mOhms - 4 V, + 15 V 3.5 V 51.1 nC - 55 C + 175 C 235 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS 60May Stock
₱949.08
₱546.63
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 40 A 97.5 mOhms - 4 V, + 15 V 3.5 V 51.1 nC - 55 C + 175 C 235 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS 120Available ang Stock ng Pabrika
₱2,370.56
₱1,550.93
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 97.4 A 28.5 mOhms - 8 V, + 19 V 3.6 V 175 nC - 55 C + 175 C 405 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS 100Available ang Stock ng Pabrika
₱631.29
₱414.73
₱350.31
₱333.74
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement