Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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Mga Resulta: 51
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 3,980May Stock
Min.: 1
Mult.: 1
: 2,500

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 86May Stock
Min.: 1
Mult.: 1

ISSI DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS 369May Stock
Min.: 1
Mult.: 1

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 480May Stock
Min.: 1
Mult.: 1

ISSI SRAM 16Mb 70ns 2.5v-3.6v 1M x 16 Pseudo SRAM 514May Stock
Min.: 1
Mult.: 1


ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,44 Pin TSOP II, RoHS 755May Stock
Min.: 1
Mult.: 1

ISSI IS66WVC2M16ECLL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS 480May Stock
Min.: 1
Mult.: 1

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS 310May Stock
Min.: 1
Mult.: 1

ISSI IS66WVE2M16ECLL-70BLI
ISSI SRAM 32Mb,Pseudo SRAM 2M x 16 70ns 215May Stock
Min.: 1
Mult.: 1

ISSI IS66WVE4M16ECLL-70BLI
ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns 11May Stock
Min.: 1
Mult.: 1

ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 885May Stock
Min.: 1
Mult.: 1

ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 656May Stock
Min.: 1
Mult.: 1

ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 755May Stock
Min.: 1
Mult.: 1

ISSI DRAM 64Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS 450May Stock
Min.: 1
Mult.: 1

ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 1,687May Stock
Min.: 1
Mult.: 1

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 867May Stock
800Inaasahan 10/2/2026
Min.: 1
Mult.: 1

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 130May Stock
Min.: 1
Mult.: 1

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 134May Stock
Min.: 1
Mult.: 1


ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,44 Pin TSOP II, RoHS 496May Stock
Min.: 1
Mult.: 1
: 1,000

ISSI SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 380May Stock
Min.: 1
Mult.: 1

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS Lead-Time 24 (na) Linggo
Min.: 1
Mult.: 1

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 2,259May Stock
Min.: 1
Mult.: 1
: 2,500

ISSI IS66WV51216EBLL-55TLI
ISSI SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns 1,930May Stock
2,835Inaasahan 11/2/2026
Min.: 1
Mult.: 1

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,48 Ball BGA (6x8mm), RoHS 551May Stock
Min.: 1
Mult.: 1

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 202May Stock
Min.: 1
Mult.: 1