Mga SiC MOSFET – Mouser Philippines

Lumaktaw sa Pangunahing Nilalaman

Bahagi ng TTI Family of SpecialistsKontakin ang Mouser +632 5304 7400Feedback

Palitan ang Lokasyon

+632 5304 7400 Palitan ang Lokasyon

Nasa Stock

RoHS

.hide-partial { max-height: none; } .show-more { display: none; }

SCTW70N120G2V 1200V 91A SiC Power MOSFETs

STMicroelectronics SCTW70N120G2V 1200V 91A SiC (Silicon Carbide) Power MOSFET features minimal ON-resistance and excellent switching performance, almost independent of temperature, due to the advanced, innovative properties of wide bandgap materials. The SCTW70N120G2V also offers a high-speed, robust intrinsic body diode and extremely low gate charge and input capacities. A high-temperature rating of +200°C enables the improved thermal design of power electronics systems.

.catnav-wrapper { height: auto; overflow: visible; } .catalog-nav-tabs ul { white-space: normal; }

Mga Resulta: 5

Mga Ginamit na Filter:

Isitilo ng Mounting

Package / Case

Dami ng Channel

Id - Continuous Drain Current

Rds On - Drain-Source Resistance

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

Qg - Gate Charge

Maximum na Operating Temperature

Pd - Power Dissipation

Kuwalipikasyon

I-reset Lahat

Maghanap sa loob ng mga resulta

May Stock

Karaniwang May Stock

Aktibo

Mga Bagong Produkto

Sumusunod sa RoHS

.search-refine-wrapper { display: inline-block; min-width: 100%; } .scroll-body { overflow-x: visible; } .search-table-wrapper { overflow: visible; } .hide-partial { max-height: none; } .show-more { display: none; }

Pumili	Larawan	# ng Piyesa	Mfr.	Paglalarawan	Datasheet	Availability	Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami.	Dami	RoHS	ECAD Model	Isitilo ng Mounting	Package / Case	Dami ng Channel	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum na Operating Temperature	Maximum na Operating Temperature	Pd - Power Dissipation	Channel Mode	Kuwalipikasyon
	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package SCT020W120G3-4AG STMicroelectronics 1: ₱1,228.23 181May Stock 600Inoorder	Mfr. # ng Piyesa SCT020W120G3-4AG # ng Piyesa ng Mouser 511-SCT020W120G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package Alamin Pa ang tungkol sa STMicroelectronics stm automotive grade mosfets	Datasheet	181May Stock 600Inoorder	₱1,228.23 ₱727.61	Min.: 1 Mult.: 1			Through Hole	Hip247-4	1 Channel	1.2 kV	100 A	28 mOhms	- 10 V, + 22 V	3 V	121 nC	- 55 C	+ 200 C	541 W	Enhancement	AEC-Q101
	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package SCT070W120G3-4AG STMicroelectronics 1: ₱846.63 20May Stock 1,200Inoorder	Mfr. # ng Piyesa SCT070W120G3-4AG # ng Piyesa ng Mouser 511-SCT070W120G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package Alamin Pa ang tungkol sa STMicroelectronics stm sctw70n120g2v 1200v sic power mosfet	Datasheet	20May Stock 1,200Inoorder	₱846.63 ₱565.65 ₱531.90 ₱477.30 ₱448.47	Min.: 1 Mult.: 1			Through Hole	HiP-247-4	1 Channel	1.2 kV	30 A	87 mOhms	- 18 V, + 18 V	4.2 V	41 nC	- 55 C	+ 200 C	236 W	Enhancement	AEC-Q101
	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package SCT070HU120G3AG STMicroelectronics 1: ₱900.00 599Inaasahan 12/14/2026	Mfr. # ng Piyesa SCT070HU120G3AG # ng Piyesa ng Mouser 511-SCT070HU120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package Alamin Pa ang tungkol sa STMicroelectronics stm sctw70n120g2v 1200v sic power mosfet	Datasheet	599Inaasahan 12/14/2026	Cut Tape ₱900.00 ₱617.79 ₱544.17 Reel ₱490.80	Min.: 1 Mult.: 1 : 600			SMD/SMT	HU3PAK-7	1 Channel	1.2 kV	30 A	87 mOhms	- 18 V, + 18 V	4.2 V	37 nC	- 55 C	+ 175 C	223 W	Enhancement	AEC-Q101
	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package SCT070H120G3AG STMicroelectronics 1: ₱793.26 Lead-Time para sa Hindi Naka-stock 25 (na) Linggo	Mfr. # ng Piyesa SCT070H120G3AG # ng Piyesa ng Mouser 511-SCT070H120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package Alamin Pa ang tungkol sa STMicroelectronics stm sctw70n120g2v 1200v sic power mosfet	Datasheet	Lead-Time para sa Hindi Naka-stock 25 (na) Linggo	Cut Tape ₱793.26 ₱591.41 ₱492.64 ₱439.27 Reel ₱410.43	Min.: 1 Mult.: 1 : 1,000			SMD/SMT	H2PAK-7	1 Channel	1.2 kV	30 A	87 mOhms	- 18 V, + 18 V	4.2 V	37 nC	- 55 C	+ 175 C	223 W	Enhancement	AEC-Q101
	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package SCT070W120G3-4 STMicroelectronics 1: ₱774.24 Lead-Time para sa Hindi Naka-stock 36 (na) Linggo	Mfr. # ng Piyesa SCT070W120G3-4 # ng Piyesa ng Mouser 511-SCT070W120G3-4	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package Alamin Pa ang tungkol sa STMicroelectronics stm sctw70n120g2v 1200v sic power mosfet	Datasheet	Lead-Time para sa Hindi Naka-stock 36 (na) Linggo	₱774.24 ₱576.69 ₱480.37 ₱428.22	Min.: 1 Mult.: 1			Through Hole	HiP247-4		1.2 kV	30 A	87 mOhms	- 10 V, + 22 V	3 V	41 nC	- 55 C	+ 200 C	236 W	Enhancement