LPDDR4 & LPDDR4X Mobile SDRAM

ISSI LPDDR4 and LPDDR4X SDRAM are low-voltage memory devices available in 2Gb, 4Gb, and 8Gb densities. The low-voltage cores and I/O power requirements make these devices ideal for mobile applications. The ISSI LPDDR4 and LPDDR4X SDRAM offer a clock frequency range from 1333MHz to 1600MHz and data rates up to 3200Mbps per I/O. These devices are configured with eight internal banks per channel for concurrent operation. The LPDDR4 and LPDDR4X feature programmable read and write latencies in programmable and "on-the-fly" burst lengths.

Mga Resulta: 12
Pumili Larawan # ng Piyesa
 Mfr.
Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami.
Dami RoHS ECAD Model Uri
Laki ng Memory
Lapad ng Data Bus
Maximum na Clock Frequency
Package / Case
Organisasyon
Oras ng Pag-access
Supply Voltage - Min
Supply Voltage - Max
Minimum na Operating Temperature
Maximum na Operating Temperature
Series
Packaging
ISSI DRAM Automotive (Tc: -40 to +105C), 16G, 1.06-1.17/1.70-1.95V, LPDDR4, 512Mx32, 1866MHz, 200 ball BGA (10mmx14.5mm) RoHS
Datasheet
484May Stock
Min.: 1
Mult.: 1

SDRAM - LPDDR4 16 Gbit 1.866 GHz BGA-299 512 M x 32 3.5 ns 1.7 V 1.95 V - 40 C + 105 C LPDDR4 Tray
ISSI DRAM 16G, 1.06-1.17/1.70-1.95V, LPDDR4, 512Mx32, 2133MHz, 200 ball BGA (10mmx14.5mm) RoHS
Datasheet
5May Stock
2,992Inoorder
Min.: 1
Mult.: 1

SDRAM - LPDDR4 16 Gbit 2.133 GHz BGA-299 512 M x 32 3.5 ns 1.7 V 1.95 V - 40 C + 95 C LPDDR4 Tray
ISSI DRAM 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 512Mx16, 2133MHz, 200 ball BGA (10mmx14.5mm, 1.2mm max thickness) RoHS
Datasheet
6May Stock
1,224Inoorder
Min.: 1
Mult.: 1

SDRAM - LPDDR4 8 Gbit 2.133 GHz BGA-299 512 M x 16 3.5 ns 1.7 V 1.95 V - 40 C + 95 C LPDDR4 Tray
ISSI DRAM Automotive (Tc: -40 to +105C), 16G, 1.06-1.17/1.70-1.95V, LPDDR4, 512Mx32, 2133MHz, 200 ball BGA (10mmx14.5mm) RoHS
Datasheet
5May Stock
1,088Inaasahan 4/27/2027
Min.: 1
Mult.: 1

SDRAM - LPDDR4 16 Gbit 2.133 GHz BGA-299 512 M x 32 3.5 ns 1.7 V 1.95 V - 40 C + 105 C LPDDR4 Tray
ISSI DRAM 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 512Mx16, 1866MHz, 200 ball BGA (10mmx14.5mm, 1.2mm max thickness) RoHS
Datasheet
2,759Inoorder
Min.: 1
Mult.: 1

SDRAM - LPDDR4 8 Gbit 1.866 GHz BGA-299 512 M x 16 3.5 ns 1.7 V 1.95 V - 40 C + 95 C LPDDR4 Tray
ISSI DRAM 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx32, 1600MHz, 200 ball BGA (10mmx14.5mm) RoHS
Datasheet
1,088Inaasahan 7/21/2027
Min.: 1
Mult.: 1

SDRAM - LPDDR4 8 Gbit 32 bit 1.6 GHz 256 M x 32 1.06 V 1.95 V - 40 C + 95 C
ISSI DRAM 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx16, 1866MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS
Datasheet
131Inoorder
Min.: 1
Mult.: 1

SDRAM - LPDDR4 4 Gbit 1.866 GHz FBGA-200 256 M x 16 3.5 ns 1.06 V 1.17 V - 40 C + 95 C
ISSI DRAM 8G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx32, 1866MHz, 200 ball BGA (10mmx14.5mm) RoHS
Datasheet
136Inaasahan 12/14/2026
Min.: 1
Mult.: 1

SDRAM - LPDDR4 8 Gbit 1.866 GHz FBGA-200 256 M x 32 3.5 ns 1.06 V 1.17 V - 40 C + 95 C
ISSI DRAM 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm) RoHS
Datasheet
119Inaasahan 9/14/2026
Min.: 1
Mult.: 1

SDRAM - LPDDR4 2 Gbit 16 bit 1.6 GHz 128 M x 16 1.06 V 1.95 V - 40 C + 95 C
ISSI DRAM SUGGESTED ALTERNATE IS43LQ32128A-062TBLI
Datasheet
Lead-Time para sa Hindi Naka-stock 52 (na) Linggo
Min.: 136
Mult.: 136

SDRAM - LPDDR4 4 Gbit 32 bit 1.6 GHz 128 M x 32 1.06 V 1.95 V - 40 C + 95 C
ISSI DRAM 16G, 1.06-1.17/1.70-1.95V, LPDDR4, 512Mx32, 1866MHz, 200 ball BGA (10mmx14.5mm) RoHS
Datasheet
Lead-Time 36 (na) Linggo
Min.: 1
Mult.: 1

SDRAM - LPDDR4 16 Gbit 1.866 GHz BGA-299 512 M x 32 3.5 ns 1.7 V 1.95 V - 40 C + 95 C LPDDR4 Tray
ISSI DRAM 4G, 1.06-1.17/1.70-1.95V, LPDDR4, 256Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm) RoHS
Datasheet
Lead-Time para sa Hindi Naka-stock 52 (na) Linggo
Min.: 136
Mult.: 136

SDRAM - LPDDR4 4 Gbit 16 bit 1.6 GHz 256 M x 16 1.06 V 1.95 V - 40 C + 95 C