A5Gx Airfast RF Power GaN Transistors

NXP Semiconductors  A5Gx Airfast RF Power GaN Transistors ay 85W at 112W asymmetrical Doherty RF power GaN transistors. Ang NXP Semiconductors  A5Gx transistors ay mainam para sa mga cellular base station na nangangailangan ng malawak na bandwidth. Ang pagganap ng mga device ay ginagarantiyahan sa loob ng saklaw ng tinukoy na dalas para sa bawat bahagi, ngunit hindi sa labas nito.

Mga Resulta: 6
Pumili Larawan # ng Piyesa
 Mfr.
Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami.
Dami RoHS ECAD Model Isitilo ng Mounting
Package / Case
Vds - Drain-Source Breakdown Voltage
Minimum na Operating Temperature
Maximum na Operating Temperature
Maximum na Operating Frequency
Minimum na Operating Frequency
Teknolohiya

NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 1930 1995 MHz, 85 W Avg., 48 V
Datasheet
35May Stock
Min.: 1
Mult.: 1
: 250

1.995 GHz 1.93 GHz GaN-on-Si


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V
Datasheet
208May Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C 2.2 GHz 2.11 GHz GaN-on-Si

NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 717-850 MHz, 112 W Avg., 50 V
Datasheet
30May Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C 850 MHz 717 MHz GaN-on-Si


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 1805-1880 MHz, 85 W Avg., 48 V
Datasheet
5May Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C 1.88 GHz 1.805 GHz GaN-on-Si


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 2496-2690 MHz, 85 W Avg., 48 V
Datasheet
2May Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C 2.69 GHz 2.496 GHz GaN-on-Si


NXP Semiconductors GaN FETs Airfast RF Power GaN Transistor, 865-960 MHz, 112 W Avg., 50 V
Datasheet
Lead-Time para sa Hindi Naka-stock 53 (na) Linggo
Min.: 1
Mult.: 1
: 250

SMD/SMT OM-780-4S4S-8 125 V - 55 C + 150 C 960 MHz 865 MHz GaN-on-Si