TGF2965-SM GaN RF Input-Matched Transistor

Qorvo TGF2965-SM GaN RF Input-Matched Transistor is a 6W (P3dB), 50Ω-input matched discrete GaN (Gallium-Nitride) on SiC (Silicon Carbide) HEMT (High-Electron Mobility Transistor) which operates from 0.03GHz to 3.0GHz. The integrated input matching network enables wideband gain and power performance. The output can be matched on board to optimize power and efficiency for any region within the band.

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Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Voltage Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Maximum na Operating Frequency Minimum na Operating Frequency Teknolohiya
Qorvo GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V 588May Stock
₱4,581.62
₱4,559.53
₱3,381.61
₱2,998.79
Min.: 1
Mult.: 1
SMD/SMT QFN-16 P-Channel 32 V 600 mA 7.5 W 3 GHz 30 MHz GaN
Qorvo GaN FETs .03-3GHz,5W,32V,50OhmGaNRFI/P-MtchT Lead-Time para sa Hindi Naka-stock 12 (na) Linggo
Reel
₱3,105.54
Min.: 2,500
Mult.: 2,500
: 2,500
SMD/SMT QFN-16 N-Channel 1 Channel 32 V 600 mA - 7 V, + 2 V - 40 C + 85 C 7.5 W GaN-on-SiC