QPD1011A GaN Input Matched Transistors
Qorvo QPD1011A GaN Input Matched Transistors are 7W (P3dB), 50Ω input matched discrete Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistor (HEMT), which operates from 30MHz to 1.2GHz. An integrated input matching network enables wideband gain and power performance, while the output can be matched on-board to optimize power and efficiency for any region within the band. The Qorvo QPD1011A transistors are housed in a 6mm x 5mm x 0.85mm leadless SMT package that saves real estate of already space-constrained handheld radios.
