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Mfr.	Mfr. #:	Qty	Ext Total

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IS41LV16256C-35TLI

ISSI

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See Product Specifications

Mouser #:

870-S41LV16256C35TLI

Mfr. #:

IS41LV16256C-35TLI

Mfr.:

ISSI

Description:

DRAM 4M,3.3V EDO DRAM Async,256Kx16,35ns

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IS41LV16256C-35TLI Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	DRAM
RoHS:
Type:	EDO DRAM
Memory Size:	4 Mbit
Data Bus Width:	16 bit
Package / Case:	TSOP-II-40
Organization:	256 k x 16
Access Time:	35 ns
Supply Voltage - Min:	3 V
Supply Voltage - Max:	3.6 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	IS41LV16256C
Packaging:	Tray
Brand:	ISSI
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	135
Subcategory:	Memory & Data Storage
Supply Current - Max:	90 mA

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Datasheet

IS41LV16256C-35TLI Datasheet (PDF)

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Compliance Codes

CNHTS:: 8542319090
USHTS:: 8542320002
JPHTS:: 854232021
KRHTS:: 8542321010
MXHTS:: 8542320201
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

ISSI

LPDDR4 & LPDDR4X Mobile SDRAM

Low-voltage memory devices, available in 2Gb, 4Gb, and 8Gb densities, ideal for mobile applications.

High-speed DRAM devices internally organized with an eight-bank setup.

Deliver high-speed data transfer rates up to 2133Mbps.

Pseudo SRAM/CellularRAM

High-speed, CMOS Pseudo-RAM developed for low-power, portable applications.

Mobile LPDDR2 SDRAM

High-speed operation, using a double data rate architecture, a prefetch architecture.

In Stock: 129

Stock:: 129 Can Ship Immediately

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Quantities greater than 129 will be subject to minimum order requirements.

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Pricing (PHP)

Qty.	Unit Price	Ext. Price
	₱397.55	₱397.55
	₱369.94	₱3,699.40
	₱358.90	₱8,972.50
	₱342.95	₱17,147.50
	₱334.36	₱33,436.00