NVBG080N120SC1

onsemi
863-NVBG080N120SC1
NVBG080N120SC1

Mfr.:

Paglalarawan:
SiC MOSFETs SIC MOS D2PAK-7L 80MOHM 1200V

Datasheet:
ECAD Model:
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Katangian ng Produkto Value ng Attribute Pumili ng Attribute
onsemi
Kategorya ng Produkto: Mga SiC MOSFET
RoHS:  
REACH - SVHC:
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
30 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
179 W
Enhancement
AEC-Q101
EliteSiC
Brand: onsemi
Kumpigurasyon: Single
Tagal ng Pagbagsak: 9 ns
Forward Transconductance - Min: 11 S
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Uri ng Produkto: SiC MOSFETS
Series: NVBG080N120SC1
Dami ng Pack ng Pabrika: 800
Subcategory: Transistors
Teknolohiya: SiC
Karaniwang Tagal ng Delay ng Pag-off: 21 ns
Karaniwang Tagal ng Delay ng Pag-on: 12 ns
Nahanap na mga produkto:
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Mga Piniling Attribute: 0

Datasheet

PCN

Mga Kodigo sa Pagsunod
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Mga Klasipikasyon ng Pinagmulan
Bansang Pinagmulan:
China
Bansang Pinagmulan ng Pag-assemble:
China
Bansa ng Diffusion:
Korea, Republic of
Ang bansa ay maaaring magbago sa oras ng pagpapadala.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

NVBG080N120SC1 1200V SiC MOSFET

onsemi NVBG080N120SC1 1200V SiC MOSFET provides superior switching performance and higher reliability than Silicon. This MOSFET has a low ON resistance and compact chip size, ensuring low capacitance and gate charge. onsemi NVBG080N120SC1 MOSFET features high efficiency, fast operation frequency, increased power density, reduced electromagnetic interference (EMI), and reduced system size. Typical applications include automotive onboard chargers and automotive DC/DC converters for EV/HEV.

May Stock: 1,930

Stock:
1,930 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
32 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
Packaging:
Buo Reel (Mag-order sa multiple ng 800)

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
Cut Tape / MouseReel™ †
₱744.79 ₱744.79
₱516.57 ₱5,165.70
₱407.98 ₱40,798.00
₱404.30 ₱202,150.00
Buo Reel (Mag-order sa multiple ng 800)
₱385.89 ₱308,712.00
2,400 Quote
† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

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