700V CoolGaN™ G4 Power Transistors

Infineon Technologies 700V CoolGaN™ G4 Power Transistors are enhancement-mode GaN-on-Si power transistors with properties that allow for high-current, high-voltage breakdown, and high-switching frequency. The GaN systems innovate with industry-leading advancements like patented Island Technology® cell layout which realizes high-current die and high yield. These 700V CoolGaN power transistors enable ultra-power density designs and high system efficiency in power switching. The GS-065 power transistors are housed in the bottom-side cooled PDFN package. These power transistors offer very low junction-to-case thermal resistance, making them ideal for demanding high-power applications. Some of the applications include data center and computing solutions, power adapters, LED lighting drivers, Switched Mode Power Supplies (SMPS), wireless power transfer, and motor drives.

Mga Resulta: 7
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Channel Mode Maximum na Operating Frequency Minimum na Operating Frequency Teknolohiya
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 234May Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT TOLL-11 N-Channel 1 Channel 700 V 40 A 58 mOhms - 10 V, + 7 V 2.6 V 6.7 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 88May Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 15.2 A 138 mOhms - 10 V, + 7 V 2.6 V 2.7 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 155May Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 12.2 A 180 mOhms - 10 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 55May Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 15.2 A 138 mOhms - 10 V, + 7 V 2.6 V 2.7 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS 3May Stock
Min.: 1
Mult.: 1
: 250

SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 23 A 90 mOhms - 10 V, + 7 V 4.2 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS Lead-Time 18 (na) Linggo
Min.: 1
Mult.: 1
: 250

SMD/SMT PDFN-6 N-Channel 1 Channel 700 V 4.6 A 455 mOhms - 10 V, + 7 V 2.6 V 800 pC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si
Infineon Technologies GaN FETs LEGACY GAN SYSTEMS Lead-Time para sa Hindi Naka-stock 18 (na) Linggo
Min.: 1
Mult.: 1
: 250

SMD/SMT PDFN-8 N-Channel 1 Channel 700 V 12.2 A 180 mOhms - 10 V, + 7 V 2.6 V 2.2 nC - 55 C + 150 C Enhancement 1 MHz 0 Hz GaN-on-Si