MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs

NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace, and radio/land-mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50VDC, 230MHz at all phase angles.

Walang Nahanap na Resulta.
Subukang baguhin ang termino ng paghahanap mo sa ibaba o bumisita sa aming Help Center.

Mga Mungkahi sa Paghahanap

  • Tingnan ang spelling ng numero ng piyesa o mga keyword
  • Gumamit ng mas kaunti o iba't ibang keyword
  • Maghanap ng 1 numero ng piyesa sa bawat pagkakataon
  • Gumamit ng 1 filter sa bawat pagkakataon