3300V & 2300V Silicon Carbide (SiC) MOSFETs

Navitas Semiconductor 3300V and 2300V Silicon Carbide (SiC) MOSFETs are based on the latest GeneSiC™ trench-assisted planar (TAP) technology and feature flexible packaging formats, including power module, discrete, and known good die (KGD). For high-power density and high-reliability systems, the MOSFETs are integrated into an advanced SiCPAK™ G+ power module package, in half-bridge and full-bridge circuit configurations. The proprietary TAP SiC MOSFET technology offers improved performance, reliability, and avalanche robustness. The TAP architecture performs a multi-step e-field management profile to significantly reduce voltage stress and improve voltage blocking capabilities compared to trench and traditional-planar SiC MOSFETs. Navitas 3300V and 2300V SiC MOSFETs are ideal for AI data centers, grid and energy infrastructure, and industrial electrification, including energy storage, renewable, and megawatt-scale fast-charging applications.

Results: 8
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 Mfr.
Description Datasheet Availability Pricing (PHP) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Package / Case
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
GeneSiC Semiconductor MOSFET Modules 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module Non-Stocked Lead-Time 26 Weeks
₱20,346.11
Min.: 48
Mult.: 48
2.3 kV 296 A N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET Modules 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM Non-Stocked Lead-Time 26 Weeks
₱20,836.91
Min.: 48
Mult.: 48
2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET Modules 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module
Datasheet
Non-Stocked Lead-Time 26 Weeks
₱29,501.99
Min.: 48
Mult.: 48
SiCPAK G+ 2.3 kV 8 mOhms - 55 C + 150 C N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET Modules 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM
Datasheet
Non-Stocked Lead-Time 26 Weeks
₱29,992.79
Min.: 48
Mult.: 48
2.3 kV 8 mOhms - 55 C + 150 C N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H11MT23GB4
GeneSiC Semiconductor MOSFET Modules 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module Non-Stocked Lead-Time 26 Weeks
₱20,522.80
Min.: 48
Mult.: 48
2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H11MT23GB4-T
GeneSiC Semiconductor MOSFET Modules 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM Non-Stocked Lead-Time 26 Weeks
₱21,013.60
Min.: 48
Mult.: 48
2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H22MT33GB4
GeneSiC Semiconductor MOSFET Modules 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module Non-Stocked Lead-Time 26 Weeks
₱28,504.44
Min.: 48
Mult.: 48
3.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H22MT33GB4-T
GeneSiC Semiconductor MOSFET Modules 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM Non-Stocked Lead-Time 26 Weeks
₱28,995.24
Min.: 48
Mult.: 48
3.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray