NVH4L015N065SC1

onsemi
863-NVH4L015N065SC1
NVH4L015N065SC1

Mfr.:

Paglalarawan:
SiC MOSFETs SIC MOS TO247-4L 650V

Datasheet:
ECAD Model:
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Katangian ng Produkto Value ng Attribute Pumili ng Attribute
onsemi
Kategorya ng Produkto: Mga SiC MOSFET
RoHS:  
TO-247-4
EliteSiC
Brand: onsemi
Packaging: Tube
Uri ng Produkto: SiC MOSFETS
Series: NVH4L015N065SC1
Dami ng Pack ng Pabrika: 30
Subcategory: Transistors
Teknolohiya: SiC
Nahanap na mga produkto:
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Mga Piniling Attribute: 0

Datasheet

PCN

Mga Kodigo sa Pagsunod
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Mga Klasipikasyon ng Pinagmulan
Bansang Pinagmulan:
China
Bansang Pinagmulan ng Pag-assemble:
China
Bansa ng Diffusion:
Korea, Republic of
Ang bansa ay maaaring magbago sa oras ng pagpapadala.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low RDS(on), and high short circuit withstand time (SCWT).

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The onsemi NVH4L015N065SC1 features low ON resistance, and the compact chip size ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

May Stock: 380

Stock:
380 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
44 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
LIBRENG Ipapadala ang Produktong Ito

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱2,434.98 ₱2,434.98
₱1,796.33 ₱17,963.30
₱1,752.16 ₱210,259.20

May di-inaasahang error na nangyari.


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