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IXYS Power MOSFET

IXYS Power MOSFET is designed for RF applications below 100MHz, linear applications, and high-power, high-frequency, and high-speed switching applications. This Power MOSFET is available in a TO-247-3 package style for a broad spectrum of market needs, electrical design requirements, and mechanical and mounting specifications.

Features

  • Optimized for RF and high-speed switching
  • High power density
  • Easy to mount, no insulators are needed
  • Excellent thermal transfer
  • -55°C to +175°C operating temperature range
  • 18A current
  • 530mΩ RDSON
  • Operating mode options
    • Switching
    • Linear

Additional Resources

Associated Products

IXYS SiC (Silicon Carbide) Diodes & Rectifiers

Extremely fast switching devices with zero recovery and temperature independent behavior.

Learn Moretungkol sa IXYS SiC (Silicon Carbide) Diodes & Rectifiers View Productskaugnay ng IXYS SiC (Silicon Carbide) Diodes & Rectifiers
Inilathala: 2017-10-13 | Na-update: 2022-03-31