Ampleon BLF981/BLF981S LDMOS Power Transistors
Ampleon BLF981/BLF981S Laterally Diffused Metal-Oxide-Semiconductor (LDMOS) Power Transistors are 170W devices designed for high-efficiency broadband applications across a wide frequency range from HF to 1400MHz. These transistors are particularly well-suited for use in broadcast transmitters, industrial, scientific, medical (ISM), avionics, and other non-cellular communication systems. Built to withstand extreme operating conditions, the Ampleon BLF981/BLF981S offers excellent ruggedness, high power gain, and integrated dual-sided ESD protection. The devices are optimized for both analog and digital signal transmission, ensuring reliable performance and easy power control. The BLF981 is housed in a SOT467C package, while the BLF981S comes in a SOT467B package, both supporting robust thermal management and long-term reliability.
Features
- Designed for broadband operation
- High efficiency
- Integrated dual-sided ESD protection
- Excellent ruggedness
- High power gain
- Excellent reliability
- Easy power control
- Excellent stability
Applications
- Broadcast transmitter applications
- Industrial, scientific, and medical applications
- Avionics applications up to 1400MHz
- Non-cellular communications applications
Specifications
- 108V maximum drain-source voltage
- -6V to +11V gate-source voltage range
- 0.61K/W typical junction-to-case thermal resistance
- Package options
- SOT467C for BLF981
- SOT467B for BLF981S
- AC characteristics
- 0.43pF typical feedback capacitance
- 111pF typical input capacitance
- 31.9pF typical output capacitance
- +225°C maximum junction temperature
- DC characteristics
- 108V minimum drain-source breakdown voltage
- 1.5V to 2.5V gate-source threshold voltage range
- 1.5V to 2.5V gate-source quiescent voltage range
- 1.4µA maximum drain leakage current
- 20A typical drain cut-off current
- 140nA maximum gate leakage current
- 0.19Ω typical drain-source on-state resistance