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EPC EPC2305 Enhancement-Mode GaN Power Transistor

Efficient Power Conversion (EPC) EPC2305 Enhancement-Mode Gallium Nitride (GaN) Power Transistor is available in a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management. The EPC2305 features 150V drain-source breakdown voltage (continuous) VDS and 2.2mΩ typical and 3mΩ maximum drain-source on resistance RDS(on). This power resistor from EPC provides efficient operation in many topologies, thanks to the ultra-low capacitance and zero reverse recovery (QRR) of the eGaN® FET. Typical applications for the EPC2305 include phones, notebooks, gaming PCs, power tools, home robotics, e-mobility, and solar.

Features

  • Ultra-high efficiency
  • No reverse recovery (QRR)
  • Ultra-low QG
  • Excellent thermal performance
  • Small footprint for higher power density
  • Enhanced thermal-max package
  • Application notes
    • Easy-to-use and reliable gate, gate drive ON = 5V typical, OFF = 0V (negative voltage not needed)
    • Top of FET is electrically connected to source

Applications

  • High frequency DC-DC
  • AC-DC chargers and adapters
  • Fast-chargers for phones, notebooks, and gaming PCs
  • BLDC motor drives
  • Motor drives for e-mobility
  • Solar optimizers and maximum power point tracking (MPPT)
  • Class-D audio
  • DC-DC and chargers for e-mobility, power tools, and home robotics

Specifications

  • 150VDS (continuous)
  • 2.2mΩ typical and 3mΩ maximum RDS(on)
  • 3mm x 5mm QFN package
  • Moisture sensitivity level (MSL) 2
  • Thermally enhanced package with exposed top (Rthjc = 0.2°/W) and wettable flank

Characteristics

Performance Graph - EPC EPC2305 Enhancement-Mode GaN Power Transistor
Inilathala: 2026-02-13 | Na-update: 2026-02-13