Infineon Technologies CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs
Infineon Technologies CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs offer increased power density, higher efficiency, and improved reliability. The granular portfolio features 1200V SiC MOSFETs in TO-247-3pin, TO-247-4pin, and D2PAK-7pin packages with an RDS(on) ranging from 8.7mΩ to 160mΩ, and ID at +25°C, maximum of 17A to 205A. High power density, superior efficiency, bi-directional charging capabilities, and significant reductions in system costs make the Infineon Technologies 1200V Automotive CoolSiC™ MOSFET Modules an ideal choice for onboard charger and DC-DC applications. The TO- and SMD components also come with Kelvin-source pins for optimized switching performance.
Features
- Revolutionary Silicon Carbide semiconductor material
- Very low switching losses
- Increased turn-on voltage VGS(on) of 20V
- IGBT-compatible driving voltage
- 0V turn-off gate voltage
- Benchmark gate threshold voltage of VGS(the) = 4.5V
- Best-in-class switching energy
- Low device capacitances
- Threshold-free on-state characteristic
- Temperature-independent turn-off switching losses
- .XT die attach technology for best-in-class thermal performance
- Fully controllable dv/dt
- Sense pin for optimized switching performance
- Suitable for HV creepage requirements
- Thin leads for reduced risk of solder bridges
- Commutation robust body diode, ready for synchronous rectification
- -55°C to +175°C operating temperature range
- Lead-free, Halogen-free, and RoHS-compliant
Applications
- Onboard chargers and PFCs
- Boosters and DC/DC converter
- Auxiliary inverters
Videos
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Inilathala: 2024-01-09
| Na-update: 2024-02-06