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Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency. 

The CoolSiC M1 MOSFETs are offered in a compact TO-247 3-pin/4-pin package and are Pb-free, halogen-free, and RoHS-compliant.

Features

  • Low capacitances
  • Optimized switching behavior at higher currents
  • Commutation robust, fast body diode with low reverse recovery charge (Qrr)
  • Superior gate oxide reliability
  • Excellent thermal behavior
  • Increased avalanche capability
  • Works with standard drivers
  • High performance, high reliability, and ease of use
  • Allows high system efficiency
  • Reduces system cost and complexity
  • Enables smaller system size
  • Works in topologies with continuous hard commutation
  • Fit for high temperature and harsh operations
  • Enables bi-directional topologies

Applications

  • Servers
  • Telecom
  • SMPS
  • Energy storage and battery formation
  • Solar energy systems / solar PV inverters
  • UPS
  • EV charging infrastructure
  • Motor drives
  • Class D amplifiers

Resources

Videos

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Package Outline (TO-247 3-pin)

Mechanical Drawing - Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs

Package Outline (TO-247 4-pin)

Mechanical Drawing - Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs
View Results ( 26 ) Page
Numero ng Piyesa Datasheet Package / Case Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge Pd - Power Dissipation
IMBG65R057M1HXTMA1 IMBG65R057M1HXTMA1 Datasheet 39 A 74 mOhms 28 nC 161 W
IMBG65R260M1HXTMA1 IMBG65R260M1HXTMA1 Datasheet 6 A 346 mOhms 22 nC 65 W
IMBG65R163M1HXTMA1 IMBG65R163M1HXTMA1 Datasheet 17 A 217 mOhms 27 nC 85 W
IMBG65R022M1HXTMA1 IMBG65R022M1HXTMA1 Datasheet 64 A 30 mOhms 67 nC 300 W
IMBG65R107M1HXTMA1 IMBG65R107M1HXTMA1 Datasheet 24 A 141 mOhms 35 nC 110 W
IMBG65R083M1HXTMA1 IMBG65R083M1HXTMA1 Datasheet 28 A 111 mOhms 44 nC 126 W
IMBG65R039M1HXTMA1 IMBG65R039M1HXTMA1 Datasheet 54 A 51 mOhms 41 nC 211 W
IMBG65R030M1HXTMA1 IMBG65R030M1HXTMA1 Datasheet 63 A 42 mOhms 49 nC 234 W
IMZA65R107M1HXKSA1 IMZA65R107M1HXKSA1 Datasheet TO-247-4 20 A 142 mOhms 15 nC 75 W
IMBG65R072M1HXTMA1 IMBG65R072M1HXTMA1 Datasheet 33 A 94 mOhms 22 nC 140 W

Infineon Power and Sensing Selection Guide

Inilathala: 2020-01-22 | Na-update: 2024-09-23