Infineon Technologies BGA5x1BN6 Low-noise Amplifiers

Infineon Technologies BGA5x1BN6 Amplifier product family includes +18dBm high-gain, low-noise amplifiers that cover the low (600-1000MHz) mid (1805-2200MHz), and high-band (2300-2690MHz) frequency ranges. Based on Infineon Technologies‘ B9HF Silicon Germanium technology, the BGA5x1BN6 Amplifiers operate from a 1.5V to 3.6V supply voltage and offer single-line two-state control.  The amplifiers provide excellent low-noise performance and competitive insertion-loss levels. Designers can easily enable BGA5x1BN6's off-state mode by powering down the VCC. Available in an ultra-small leadless package measuring only 0.7 x 1.1mm2, the BGA5x1BN6 Amplifiers are ideal for smartphones running on the LTE or GSM network.

Features

  • Multi-state control: bypass- and high gain-mode
  • Ultra-small TSNP-6-2 and/or TSNP-6-10 leadless package
  • Low-external component count
  • Size 0.7 x 1.1mm2

Applications

  • Smartphones with
    • LTE
    • GSM

Block Diagram

Block Diagram - Infineon Technologies BGA5x1BN6 Low-noise Amplifiers
Inilathala: 2018-06-26 | Na-update: 2023-05-12