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IXYS Integrated Circuits MMIX1T500N20X4 200V X4-Class Power MOSFET

IXYS MMIX1T500N20X4 200V X4-Class Power MOSFET is an N-channel enhancement mode MOSFET with an up to 200V blocking voltage and a low RDS(on) of 1.99mΩ. It offers low conduction losses and has reduced heat dissipation. The high-performance ceramic-based isolated package improves overall thermal resistance Rth(j-s) and power handling capability. The IXYS MMIX1T500N20X4 has an isolation voltage of 2500VAC (RMS) for 1 minute and a low gate charge (Qg) of 535nC.

Features

  • Up to 200V blocking voltage with low RDS(on) of 1.99mΩ
  • Low 535nC gate charge (Qg)
  • High current capability ID = 480A
  • Compact design with high power density
  • Low conduction losses and reduced heat dissipation
  • Low gate drive power requirements
  • Reduced paralleling effort and decreased part count
  • Cost-efficient solution with ease of assembly
  • High-performance ceramic-based isolated package improves overall thermal resistance Rth(j-s) and power handling capability
  • Isolation voltage of 2500VAC (RMS), 1 minute
  • Low drain-to-tab stray capacitance
  • Advanced topside cooled packaging simplifies thermal management
  • RoHS compliant
  • Epoxy meets UL 94V-0

Applications

  • DC load switches
  • Battery energy storage systems (BESS)
  • Industrial and process power supplies
  • Industrial charging infrastructures
  • Drones and VTOL

Specifications

  • 200V drain-source voltage (VDSS)(Tvj = +25°C to +175°C)
  • ±20V continuous gate-source voltage (VGSS)
  • ±30V transient gate-source voltage (VGSM)
  • 1.99mΩ maximum drain-source on-resistance (RDS(on)) (VGS = 10V, ID =100A)
  • 1300A drain current (IDM)
  • 1070W power dissipation (PD) (TC = +25°C)
  • Drain-source leakage current (IDSS)
    • VDS = VDSS, VGS = 0V: 25µA
    • VDS = VDSS, VGS = 0V, Tvj = +105°C: 3mA

Pinout Diagram

Schematic - IXYS Integrated Circuits MMIX1T500N20X4 200V X4-Class Power MOSFET
Inilathala: 2025-09-24 | Na-update: 2025-10-08