MACOM CMPA5259050S GaN MMIC Power Amplifier

MACOM CMPA5259050S GaN MMIC Power Amplifier includes a two-stage reactively matched amplifier design approach enabling high power and power-added efficiency. The gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) features 27dB small-signal gain, 65W typical PSAT, and up to 28V operation. The MACOM CMPA5259050S GaN MMIC Power Amplifier is housed in a 5mm x 5mm surface mount (QFN package) and is ideal for civil and military pulsed radar amplifier applications.