MACOM CMPA5259080S GaN MMIC Power Amplifier

MACOM CMPA5259080S GaN MMIC Power Amplifier contains a two-stage reactively matched amplifier design approach for high power and power-added efficiency. The CMPA5259080S features 29dB small-signal gain, 110W typical PSAT, and an operation up to 40V. The CMPA5259080S gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) is available in a 7mm x 7mm surface mount (QFN package). It is ideal for civil and military pulsed radar amplifier applications.