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NXP Semiconductors MRF101 RF Power LDMOS Transistors

NXP Semiconductors MRF101 RF Power LDMOS Transistors are highly-rugged N-channel enhancement mode lateral MOSFETs designed to exhibit high performance up to 250MHz. These transistors integrate ESD protection with a greater negative gate-source voltage range for improved Class C operation. Both the transistors come in two pin-out versions mirroring each other to support push-pull configurations for further flexibility. The MRF101 transistors are ideal for high Voltage Standing Wave Ratio (VSWR) industrial, scientific, and medical applications.

Features

  • Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • -40°C to +150°C temperature range 
  • 30V to 50V voltage range
  • Suitable for linear application
  • TO-220-3L package

Applications

  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI and other medical applications
    • Industrial heating, welding, and drying systems
  • Broadcast
    • Radio broadcast
    • VHF TV broadcast
  • Mobile radio VHF base stations
  • HF and VHF communications
  • Switch mode power supplies

Additional Resource

Development Tools

NXP Semiconductors MRF101AN Reference Circuits

Enables rapid evaluation and prototyping of the MRF101AN 100W RF Power Transistor.

Learn Moretungkol sa NXP Semiconductors MRF101AN Reference Circuits View Productskaugnay ng NXP Semiconductors MRF101AN Reference Circuits

Associated Transistors

NXP Semiconductors MRF300 RF Power LDMOS Transistors

Feature unmatched input and output, which allows for wide frequency range operation.

Learn Moretungkol sa NXP Semiconductors MRF300 RF Power LDMOS Transistors View Productskaugnay ng NXP Semiconductors MRF300 RF Power LDMOS Transistors
Inilathala: 2018-12-03 | Na-update: 2022-10-17