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onsemi AFGHL40T65SQD & AFGHL50T65SQD IGBTs

onsemi AFGHL40T65SQD and AFGHL50T65SQD IGBTs are 4th generation, high-speed field-stop IGBTs ideal for automotive applications. The AFGHL40T65SQD and AFGHL50T65SQD IGBTs offer higher reliability and optimum performance for hard and soft switching. onsemi AFGHL40T65SQD and AFGHL50T65SQD IGBTs are AEC Q101 qualified and provide very low switching and conduction losses.

Features

  • AEC-Q101 qualified
  • +175°C maximum junction temperature
  • Positive temperature coefficient (PTC) for easy parallel operating
  • High current capability
  • 1.6V typical VCE(Sat) at 40A IC low saturation voltage
  • 100% of the parts are tested for ILM
  • Fast switching
  • Tight parameter distribution
  • RoHS compliant

Applications

  • Hard switching
  • DC-DC converters
  • Totem pole bridgeless power factor correction (PFC)
  • PTC
  • Automotive
    • Hybrid/electric vehicle (HEV-EV) onboard chargers
    • HEV-EV DC-DC converters

Specifications

  • AFGHL40T65SQD
    • 650V collector-to-emitter voltage
    • ±20V gate-to-emitter voltage
    • ±30V transient gate-to-emitter voltage
    • 40A at TC = +100°C collector current
    • 80A at TC = +25°C collector current
    • 160A pulsed collector current
    • 80A at TC = +25°C diode forward current
    • 20A at TC = +100°C diode forward current
    • 160A Pulsed diode maximum forward current
    • 238W at TC = +25°C maximum power dissipation
    • 119W at TC = +100°C maximum power dissipation
    • -55 to +175°C operating junction/storage temperature range
    • +300°C maximum lead temperature for soldering purposes, 1/8" from the case for 5s
  • AFGHL50T65SQD
    • 650V Collector-to-emitter voltage
    • ±20V gate-to-emitter voltage
    • ±30V transient gate-to-emitter voltage
    • 50A at TC = +100°C collector current
    • 80A at TC = +25°C collector current
    • 200A pulsed collector current
    • 80A at TC = +25°C diode forward current
    • 30A at TC = +100°C diode forward current
    • 200A pulsed diode maximum forward current
    • 268W at TC = +25°C maximum power dissipation
    • 134W at TC = +100°C maximum power dissipation
    • -55°C to +175°C operating junction/storage temperature range
    • +300°C maximum lead temperature for soldering purposes, 1/8" from the case for 5s

Datasheets

Overview

onsemi AFGHL40T65SQD & AFGHL50T65SQD IGBTs
Inilathala: 2020-06-16 | Na-update: 2024-06-10