onsemi FFSx0865B-F085 650V SiC Schottky Diodes
onsemi FFSx0865B-F085 650V 8A Silicon Carbide Schottky Diodes use a technology that provides superior switching performance and higher reliability. onsemi FFSx0865B-F085 SiC Diodes feature temperature-independent switching characteristics, no reverse recovery current, and excellent thermal performance. Additional benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, reduced system size, and increased cost-effectiveness. The FFSx0865B-F085 650V, 8A SiC Schottky Diodes are available in a D2PAK-3 package.Features
- +175°C max junction temperature
- 33mJ avalanche rated
- High surge current capacity
- Positive temperature coefficient
- Ease of paralleling
- No Reverse Recovery / No Forward Recovery
- AEC-Q101 qualified and PPAP capable
- Lead-free
- Halogen-free/BFR Free
- RoHS compliant
Applications
- Automotive HEV-EV
- Onboard chargers
- DC-DC converters
Electrical Connection
View Results ( 2 ) Page
| Numero ng Piyesa | Datasheet | Package / Case | Ifsm - Forward Surge Current | Pd - Power Dissipation |
|---|---|---|---|---|
| FFSB0865B-F085 | ![]() |
D2PAK-2 | 56 A | 73 W |
| FFSD0865B-F085 | ![]() |
DPAK-3 (TO-252-3) | 42 A | 91 W |
Inilathala: 2019-11-07
| Na-update: 2024-02-05

