onsemi FFSx0865B-F085 650V SiC Schottky Diodes

onsemi FFSx0865B-F085 650V 8A Silicon Carbide Schottky Diodes use a technology that provides superior switching performance and higher reliability. onsemi FFSx0865B-F085 SiC Diodes feature temperature-independent switching characteristics, no reverse recovery current, and excellent thermal performance. Additional benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, reduced system size, and increased cost-effectiveness. The FFSx0865B-F085 650V, 8A SiC Schottky Diodes are available in a D2PAK-3 package.

Features

  • +175°C max junction temperature
  • 33mJ avalanche rated
  • High surge current capacity
  • Positive temperature coefficient
  • Ease of paralleling
  • No Reverse Recovery / No Forward Recovery
  • AEC-Q101 qualified and PPAP capable
  • Lead-free
  • Halogen-free/BFR Free
  • RoHS compliant

Applications

  • Automotive HEV-EV
    • Onboard chargers
    • DC-DC converters

Electrical Connection

Location Circuit - onsemi FFSx0865B-F085 650V SiC Schottky Diodes
View Results ( 2 ) Page
Numero ng Piyesa Datasheet Package / Case Ifsm - Forward Surge Current Pd - Power Dissipation
FFSB0865B-F085 FFSB0865B-F085 Datasheet D2PAK-2 56 A 73 W
FFSD0865B-F085 FFSD0865B-F085 Datasheet DPAK-3 (TO-252-3) 42 A 91 W
Inilathala: 2019-11-07 | Na-update: 2024-02-05