onsemi 650V EliteSiC (Silicon Carbide) MOSFETs

onsemi 650V EliteSiC (Silicon Carbide) MOSFETs use a technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The onsemi TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).

Features

  • Max junction temperature 175°C
  • Leadless thin SMD package
  • Kelvin source configuration
  • Ultra low gate charge
  • Low effective output capacitance
  • Zero reverse recovery current of the body diode
  • Low RDS(on)
  • 650V rated
  • 100% avalanche tested
  • Pb-free, halogen-free/BFR-free and RoHS-compliant
  • Moisture sensitivity Level 1 guarantee

Applications

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • UPS/ESS
  • Solar
View Results ( 6 ) Page
Numero ng Piyesa Datasheet Paglalarawan
NTH4L016N065M3S NTH4L016N065M3S Datasheet SiC MOSFETs SIC MOS TO247-4L 16MOHM 650V M3S
NVH4L016N065M3S NVH4L016N065M3S Datasheet SiC MOSFETs SIC MOS TO247-4L 16MOHM 650V M3S
NTBL060N065SC1 NTBL060N065SC1 Datasheet SiC MOSFETs M2 650V SIC MOSFET 60MOHM
NTBL075N065SC1 NTBL075N065SC1 Datasheet SiC MOSFETs M2 650V SIC MOSFET 75MOHM
NTH4L012N065M3S NTH4L012N065M3S Datasheet SiC MOSFETs SIC MOS TO247-4L 12MOHM 650V M3S
NVH4L012N065M3S NVH4L012N065M3S Datasheet SiC MOSFETs SIC MOS TO247-4L 12MOHM 650V M3S
Inilathala: 2024-05-10 | Na-update: 2024-07-25