onsemi AFGB30T65RQDN IGBT
onsemi AFGB30T65RQDN Insulated Gate Bipolar Transistor (IGBT) offers the optimum performance for automotive applications. This IGBT features high current capability, fast switching, high input impedance, and tightened parameter distribution. The AFGB30T65RQDN IGBT is short circuit rated and offers a high figure of merit with low conduction and switching losses. This IGBT is AEC-Q101 qualified, Pb-free, and RoHS compliant. Typical applications include the E-compressor for HEV/EV and the PTC Heater for HEV/EV.
Features
- 175°C maximum Junction Temperature (TJ)
- Positive temperature coefficient for easy parallel operation
- High current capability
- High input impedance
- Fast switching
- Tightened parameter distribution
- Low saturation voltage: VCE(Sat)=1.58V (Typ.) @ IC=30A
- AEC-Q101 qualified
- Pb-free
- RoHS compliant
Applications
- E-compressor for HEV/EV
- PTC Heater for HEV/EV
Additional Resource
Inilathala: 2025-11-04
| Na-update: 2025-12-29