onsemi AFGH4L60T120RWx-STD N-Channel Field Stop VII IGBTs
onsemi AFGH4L60T120RWx-STD N-Channel Field Stop VII IGBTs use the novel field stop 7th generation IGBT technology and a Gen7 diode in a 4-lead package. This 1200V collector-to-emitter (VCES) rated IGBT comes in a TO-247-4LD package. It is rated at 1.66V collector-to-emitter saturation voltage (VCE(SAT)) and a collector current (IC) of 60A. The onsemi AFGH4L60T120RWx-STD offers good performance with low on-state voltage and low switching losses for both hard and soft switching topologies in automotive applications.
Features
- Extremely efficient trench with field stop technology
- +175°C maximum junction temperature (TJ)
- Short circuit rated and low saturation voltage
- Fast switching and tightened parameter distribution
- AEC-Q101 qualified, PPAP available upon request
- Pb−free, Halogen-free/BFR-free, and RoHS-compliant
Applications
- Automotive E-compressors
- Automotive EV PTC heaters
- OBCs
Specifications
- 1200V collector-to-emitter voltage (VCE)
- ±20V gate-to-emitter voltage (VGE)
- ±30V transient gate-to-emitter voltage (VGE)
- Collector current (IC) of 73A (TC = +25°C), 60A (TC = +100°C)
- Power dissipation (PD) of 287W (TC = +25°C), 114W (TC = +100°C)
- 180A pulsed collector current (ICM) (TC = +25°C)
- Diode forward current (IF) of 84A (TC = +25°C), 60A (TC = +100°C)
- 180A pulsed diode maximum forward current (IFM) (TC = +25°C)
- -55°C to +175°C operating junction/storage temperature range (TJ, Tstg)
- +260°C lead temperature for soldering purposes (TL)
Circuit Diagrams
Inilathala: 2025-09-30
| Na-update: 2025-10-13