onsemi J-Series Silicon Photomultiplier (SiPM) Sensors

onsemi J-Series Silicon Photomultiplier (SiPM) Sensors have been optimized for high-performance timing applications, such as ToF-PET (time of flight positron emission tomography). Due to increased microcell density, J-Series sensors can achieve a photon detection efficiency (PDE) of 50%, with sensitivity extending down into the UV. These sensors feature industry-leading low dark count rates of 50kHz/mm2 and because the sensors are created using a high-volume CMOS silicon process, they feature an exceptional breakdown voltage uniformity of ±250mV. The J-Series sensors are available in 3mm, 4mm, and 6mm sizes packaged in a TSV chip-scale package that is compatible with industry-standard, lead-free, reflow soldering processes. onsemi J-Series Silicon Photomultiplier (SiPM) Sensors also feature onsemi's unique fast output for fast timing capability.

Features

  • High-density microcells
  • Fast output terminal
  • Temperature stability of 21.5mV/°C
  • ±250mV breakdown voltage uniformity 
  • Available in a reflow solder-compatible TSV chip-scale package
  • Ultra-low dark count rates of 50kHz/mm2 typical
  • Optimized for high-performance timing applications, such as ToF-PET
  • 3mm, 4mm, and 6mm sensor sizes
  • <30V bias voltage
  • 50% photon detection efficiency (PDE) at 420nm
  • Improved signal rise time and microcell recovery time
  • Negates the need for active voltage control
  • High uniformity
  • TSV package results in almost zero dead space, allowing the creation of high fill factor arrays and is ferrous-metal free

Applications

  • Medical imaging
  • Hazard and threat
  • 3D ranging and sensing
  • Biophotonics and sciences
  • High energy physics
Inilathala: 2018-11-16 | Na-update: 2023-01-27