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onsemi NVMFS4C306N Power MOSFETs

onsemi NVMFS4C306N Power MOSFETs offer 30V drain-to-source voltage, 3.4mΩ RDS(ON), and 71A continuous drain current. The automotive power MOSFET is available in a 5mm x 6mm flat lead SO8-FL package developed for compact and efficient designs.

The onsemi NVMFS4C306N Power MOSFETs have a wettable flank option available for enhanced optical inspection. The NVMFS4C306N is AEC-Q101-qualified and PPAP-capable, ideal for automotive applications.

Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • AEC-Q101-qualified and PPAP-capable
  • NVMFS4C306NWF - wettable flanks option for enhanced optical inspection
  • Pb-free, Halogen-free/BFR-free, and RoHS-compliant

Applications

  • Reverse battery protection
  • DC-DC converters output driver

Specifications

  • 71A maximum continuous drain current
  • 3.4mΩ at 10V and 4.8mΩ at 4.5V RDS(ON) maximum
  • 30V Drain-to-Source voltage
  • ±20V Gate-to-Source voltage
  • 166A pulsed drain current
  • -55°C to +175°C operating junction and storage temperature range

Typical Application

Application Circuit Diagram - onsemi NVMFS4C306N Power MOSFETs
Inilathala: 2023-12-29 | Na-update: 2024-05-10