Bumalik sa onsemi

onsemi NVMFWS003N10MC Single N-Channel Power MOSFETs

onsemi NVMFWS003N10MC Single N-Channel Power MOSFETs offer a 169A continuous drain current, 3.1mΩ at 10V RDS(ON), and 100V drain-to-source voltage. The NVMFWS002N10MCL is available in a 5mm x 6mm flat lead package developed for compact and efficient designs. The onsemi AEC-Q101-qualified MOSFET is PPAP-capable and ideal for automotive applications.

Features

  • Small footprint (5mm x 6mm) for compact design
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • Wettable flank product
  • AEC-Q101-qualified and PPAP-capable
  • Pb-free, Halogen-free/BFR-free, beryllium-free, and RoHS-compliant

Applications

  • 48V systems
  • Switching power supplies
  • Reverse battery protection
  • Power switches (high side driver, low-side driver, H-bridges, etc)

Specifications

  • 169A maximum continuous drain current
  • 3.1mΩ at 10V or 3.8mΩ at 4.5V RDS(ON) maximum
  • 100V Drain-to-Source voltage
  • ±20V Gate-to-Source voltage
  • 900A pulsed drain current
  • -55°C to +175°C operating junction and storage temperature range

Typical Application

Application Circuit Diagram - onsemi NVMFWS003N10MC Single N-Channel Power MOSFETs
Inilathala: 2024-01-03 | Na-update: 2024-01-11