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onsemi NXH010P90MNF1 SiC Module contains a 10Mohm 900V SiC MOSFET half-bridge and an NTC thermistor in an F1 module. The module has a recommended gate voltage of 15V to 18V. The NXH010P90MNF1 has an improved RDS(ON) at a higher voltage and low thermal resistance.
Features
Recommended gate voltage 15V - 18V
Improved RDS(ON) at a higher voltage
Low thermal resistance
Improved efficiency or higher power density
Options for TIM or no TIM
Flexible solution for high-reliability thermal interface
Applications
AC-DC Conversion
Electric Vehicle Charger
DC-AC Conversion
Energy Storage System
DC-DC Conversion
Solar Inverter 3-phase
Uninterruptible Power Supply
Learn More About EliteSiC
onsemi EliteSiC
Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.