onsemi Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).

Features

AEC-Q101 qualified and PPAP capable options available
Optimized design to minimize conduction and switching losses
Optimized packages to minimize parasitic inductance
Optimized material for improved thermal performance
25V to 80V drain-source breakdown voltage range (V_DS)
11.6A to 351A continuous drain current range (I_D)
0.7mΩ to 55mΩ drain-to-source ON-resistance range (R_DS(ON))
±20V gate-to-source voltage (V_GS)
1.1V to 4.0V gate-source threshold voltage range (V_GS(TH))
4.7nC to 166nC gate charge range (Q_g)

860mW to 311W power dissipation range (P_d)
Package options:
- DFN-5, DFN-8, DFNW-8, H-PSOF-8, PQFN-8, SO-8, SO-8FL, SO-FL-8L, WDFN-6, WDFN-8, WQFN-12
- Wettable flank options available
Operating and junction temperature range
- Industrial: -55°C to +125°C
- Automotive: -55°C to +150°C
Lead free and RoHS compliant