PANJIT PZS52CxM1Q Silicon Zener Diodes
PANJIT PZS52CxM1Q Silicon Zener Diodes feature a planar die construction and are ideal for automated assembly processes. The DFN1006-2L packaged diodes operate within a -55°C to +150°C temperature range and 4.10V to 49.35V maximum nominal zener voltage range. The PANJIT PZS52CxM1Q Silicon Zener Diodes offer 250mW maximum peak pulse power dissipation at +25°C with a 0.9V maximum forward voltage at 10mA.
Features
- Planar die construction
- Ideally suited for automated assembly processes
- DFN1006-2L package
- Solderable terminals per MIL-STD-750, Method 2026
- Lead-free in compliance with EU RoHS 2.0
- Green molding compound as per IEC 61249 standard
Specifications
- 250mW maximum peak pulse power dissipation at +25°C
- 500°C/W maximum junction-to-ambient typical thermal resistance
- 0.9V maximum forward voltage at 10mA
- 4.10V to 19.35V maximum nominal zener voltage range
- 10Ω to 170Ω maximum nominal zener impedance range
- 0.1µA to 3.0µA maximum reverse leakage current
- -55°C to +150°C operating temperature range
Package
Inilathala: 2024-04-02
| Na-update: 2024-04-11