Pulse Electronics High-Density 1Gigabit PoE/PoE+ SMD Transformers
Pulse Electronics High-Density 1Gigabit PoE/PoE+ SMD Transformers offer less than 140mm2/port density and feature a reliable surface mount Ball Grid Array (BGA). These transformers support 4-pair PoE+ (70W) of DC power and are designed to fit behind 2xN connectors. The 1Gigabit PoE/PoE+ SMD transformers offer 10/100/1000base-T connectivity and a modular construction that exceeds IEEE802.3u/ab. These transformers operate over the -40°C to 85°C temperature range.
Features
- Compact SMT 1Gigabit PoE modules offering less than 140mm2/port density
- Reliable surface mount ball grid array
- Standard and industrial temperature range
- Modular construction exceeds IEEE802.3u/ab
- Options support 4-pair PoE+ (70W) of DC power
- Designed to fit behind 2xN connectors
- RoHS-6 compliant and peak reflow temperature rating of 245°C
View Results ( 25 ) Page
| Numero ng Piyesa | Datasheet | Range ng Frequency | Inductance | Voltage ng Isolation | Dami ng Channel | Rating ng Current | Maximum na DC Resistance | Minimum na Operating Temperature | Maximum na Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|
| H5200NL |  |
1 MHz to 125 MHz | 350 uH | 1.5 kV | 2 Channel | 8 mA | 650 mOhms | 0 C | + 70 C |
| HX5610NL | |
1 MHz to 125 MHz | 350 uH | 1.5 kV | 1 Channel | 8 mA | 650 mOhms | - 40 C | + 85 C |
| HX6400NLT | |
1 MHz to 125 MHz | 150 uH | 1.5 kV | 4 Channel | 10.3 mA | 650 mOhms | - 40 C | + 85 C |
| H5401NL | |
1 MHz to 125 MHz | 350 uH | 1.5 kV | 4 Channel | 8 mA | 650 mOhms | 0 C | + 70 C |
| HX5401NLT | |
1 MHz to 125 MHz | 350 uH | 1.5 kV | 4 Channel | 8 mA | 650 mOhms | - 40 C | + 85 C |
| H5400NL | |
1 MHz to 125 MHz | 350 uH | 1.5 kV | 4 Channel | 8 mA | 650 mOhms | 0 C | + 70 C |
| HX5610NLT | |
1 MHz to 125 MHz | 350 uH | 1.5 kV | 1 Channel | 8 mA | 650 mOhms | - 40 C | + 85 C |
| H5201NL | |
1 MHz to 125 GHz | 350 uH | 1.5 kV | 2 Channel | 8 mA | 650 mOhms | 0 C | + 70 C |
| H5200NLT | |
1 MHz to 125 MHz | 350 uH | 1.5 kV | 2 Channel | 8 mA | 650 mOhms | 0 C | + 70 C |
| H5201NLT | |
1 MHz to 125 GHz | 350 uH | 1.5 kV | 2 Channel | 8 mA | 650 mOhms | 0 C | + 70 C |
Inilathala: 2024-04-29
| Na-update: 2024-05-09