Qorvo QPD1011A GaN Input Matched Transistors
Qorvo QPD1011A GaN Input Matched Transistors are 7W (P3dB), 50Ω input matched discrete Gallium Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistor (HEMT), which operates from 30MHz to 1.2GHz. An integrated input matching network enables wideband gain and power performance, while the output can be matched on-board to optimize power and efficiency for any region within the band. The Qorvo QPD1011A transistors are housed in a 6mm x 5mm x 0.85mm leadless SMT package that saves real estate of already space-constrained handheld radios.
Features
- 7W (P3dB), 50Ω input matched discrete GaN on SiC HEMT
- Operates from 30MHz to 1.2GHz on a 50V supply rail
- Integrated input matching network
- Low thermal resistance package
- CW and pulse capable
- Surface-mount, 6mm x 5mm x 0.85mm DFN package
- SVHC- and PFOS-free
- Lead-free, Halogen-/antimony-free, and RoHS-compliant
Applications
- Military radar
- Civilian radar
- Land mobile and military radio communications
- Test instrumentation
- Wideband or narrowband amplifiers
- Jammers
Specifications
- +145V maximum breakdown voltage
- 1.46A maximum drain current
- 12V to 55V drain voltage range
- 20mA typical drain bias current
- -7V to +2V maximum gate voltage range, -2.8V typical
- 3.6mA maximum gate current range
- 14.7W maximum power dissipation, 10W operating
- 27dBm maximum RF input power
- 0.6GHz to 1.2GHz typical frequency range
- Linear gain ranges
- 18.7dB to 21.3dB power-tuned
- 20.9dB to 22.5dB efficiency-tuned
- Output power ranges at 3dB compression
- 39.1dBm to 39.7dBm power-tuned
- 37.3dBm to 38.4dBm efficiency-tuned
- Power-added efficiency ranges at 3dB compression
- 49.1% to 59.4% power-tuned
- 55.4% to 71.6% efficiency-tuned
- Gain ranges at 3dB compression
- 15.7dB to 18.3dB power-tuned
- 17.9dB to 19.5dB efficiency-tuned
- +320°C maximum mounting temperature for 30s
- -40°C to +85°C operating temperature range
- +250°C maximum channel temperature
- Moisture Sensitivity Level (MSL) 3
- ESD ratings per ANSI/ESD/JEDEC JS-001
- 250V Human Body Model (HBM)
- 1000V Charged Device Model (CDM)
Functional Block Diagram
Related Development Tool
Qorvo QPD1011AEVB Evaluation Board
Purpose‑built to speed device characterization and amplifier prototyping in the 100MHz to 1GHz band.
Inilathala: 2026-01-13
| Na-update: 2026-01-19