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Renesas Electronics RAA226110 Low-Side Drivers

Renesas Electronics RAA226110 Low-Side Drivers is designed to drive enhancement-mode Gallium Nitride (GaN) FETs in isolated and non-isolated topologies. The RAA226110 operates with a supply voltage from 6.5V to 18V. It has inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device.

Features

  • Wide operating voltage range of 6.5V to 18V
  • Up to 18V logic inputs (regardless of VDD level)
    • Inverting and non-inverting inputs
  • Optimized to drive enhancement mode GaN FETs
    • Internal 5.8V regulated gate drive voltage
    • Independent outputs for adjustable turn-on/turn-off speeds
    • Source current programmable 0.3A, 0.75A, 2A
    • Overcurrent protection with adjustable thresholds of 40mV, 80mV, 120mV
  • Fault pin and over-temperature protection
  • -40°C to +125°C operating temperature range
  • Flyback and forward converters
  • Boost and PFC converters
  • Secondary synchronous FET drivers

Applications

  • Switching-mode power supply
  • GaN FET driver application
Inilathala: 2021-09-01 | Na-update: 2022-03-11