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ROHM Semiconductor RFNxRSM2S Ultra Fast Recovery Diodes

ROHM Semiconductor RFNxRSM2S Ultra Fast Recovery Diodes are silicon epitaxial planar diodes with low forward voltage and low switching loss. These ultra-fast diodes feature a 200V peak reverse voltage and a storage temperature range of -55°C to 175°C. The RFNxRSM2S ultra-fast recovery diodes provide high current overload capacity. These diodes come in a TO-277A package. The RFNxRSM2S ultra-fast recovery diodes are RoHS-compliant and ideal for general rectification applications.

Features

  • Silicon epitaxial planar structure type
  • 200V peak reverse voltage
  • Low forward voltage
  • Low switching loss
  • High current overload capacity

Applications

  • General rectification
View Results ( 6 ) Page
Numero ng Piyesa Datasheet Max na Surge Current If - Forward Current Tagal ng Pag-recover Ir - Reverse Current Vf - Forward Voltage
RFN4RSM2STFTL1 RFN4RSM2STFTL1 Datasheet 80 A 4 A 36 ns 1 uA 930 mV
RFN4RSM2STL1 RFN4RSM2STL1 Datasheet 80 A 4 A 36 ns 1 uA 930 mV
RFN6RSM2STFTL1 RFN6RSM2STFTL1 Datasheet 80 A 6 A 38 ns 1 uA 930 mV
RFN6RSM2STL1 RFN6RSM2STL1 Datasheet 80 A 6 A 38 ns 1 uA 930 mV
RFN10RSM2STFTL1 RFN10RSM2STFTL1 Datasheet 130 A 10 A 25 ns 1 uA 960 mV
RFN10RSM2STL1 RFN10RSM2STL1 Datasheet 130 A 10 A 25 ns 1 uA 960 mV
Inilathala: 2024-05-22 | Na-update: 2024-06-11