ROHM Semiconductor RFx30TZ6S & RFx60TZ6S Ultra Fast Recovery Diodes
ROHM Semiconductor RFx30TZ6S and RFx60TZ6S Ultra Fast Recovery Diodes are silicon epitaxial planar diodes offering a peak reverse voltage of 650V and a rectified forward current range from 30A to 60A. These devices feature fast recovery, ultra-low switching loss, and a high current overload capacity.
The ROHM Semiconductor RFx30TZ6S and RFx60TZ6S Ultra Fast Recovery Diodes are offered in an industry-standard TO-247-2L package with a 175℃ maximum junction temperature.
Features
- Silicon epitaxial planar structure
- 650V reverse voltage
- 30A to 60A rectified forward current range
- Ultra-fast recovery
- Ultra-soft recovery type
- Ultra-low switching loss
- High current overload capacity
- TO-247-2L package
Applications
- General rectification
- PFC power supplies
Noise Performance Comparison Waveforms
VF & trr Characteristics Comparison Map
Pin Designations
Package Outline
View Results ( 4 ) Page
| Numero ng Piyesa | Datasheet | Max na Surge Current | If - Forward Current | Tagal ng Pag-recover | Vf - Forward Voltage | Package / Case |
|---|---|---|---|---|---|---|
| RFS30TZ6SGC13 |  |
160 A | 30 A | 38 ns | 2.3 V | TO-247-2 |
| RFL30TZ6SGC13 | |
200 A | 30 A | 70 ns | 1.5 V | TO-247-2 |
| RFS60TZ6SGC13 | |
250 A | 60 A | 48 ns | 2.3 V | TO-247-2 |
| RFL60TZ6SGC13 | |
320 A | 60 A | 90 ns | 1.5 V | TO-247-2 |
Inilathala: 2022-03-14
| Na-update: 2022-07-12