ROHM Semiconductor High Efficiency Schottky Barrier Diodes
ROHM Semiconductor High Efficiency Schottky Barrier Diodes are designed to improve the tradeoff between low VF and low IR. These diodes feature Trench MOS structure, 30A peak forward surge current, high reliability, and low capacitance. The YQ1MM10Ax high efficiency Schottky barrier diodes are used in applications such as switching power supplies, freewheel diodes, and reverse polarity protection.
Features
- Trench MOS structure
- High reliability
- Small power mold type
- 100V reverse voltage
- 1A average rectified forward current
- 30A peak forward surge current
- 175°C junction temperature
- Low capacitance
Applications
- Switching power supplies
- Freewheel diodes
- Reverse polarity protection
Datasheets
Inilathala: 2025-06-17
| Na-update: 2025-07-18