SemiQ GP3D050B170B QSiC™ 1700V SiC Schottky Diode

SemiQ GP3D050B170B QSiC™ 1700V Silicon Carbide (SiC) Schottky Diode comes in a TO-247-2L package designed to meet the size and power demands in applications such as switched-mode power supplies, uninterruptible power supplies (UPS), solar inverters, and electric vehicle (EV) charging stations. This discrete diode features zero reverse recovery current and near-zero switching loss, as well as enhanced thermal management that reduces cooling needs. This results in highly efficient, high-performance designs that minimize system heat dissipation, enabling the use of smaller heatsinks to save space and costs. The GP3D050B170B module also supports easy parallel configurations for enhanced flexibility and scalability in power applications. SemiQ GP3D050B170B QSiC 1700V SiC Schottky Diode supports fast switching across an operating junction temperature range of -55°C to +175°C.

Features

  • Unipolar rectifier with surge current
  • Zero reverse recovery current
  • Fast, temperature-independent switching
  • Avalanche tested to 1250mJ
  • All parts tested to greater than 1870V
  • Near zero switching loss
  • Higher efficiency
  • Reduced heat sink requirements
  • Easy to parallel
  • RoHS compliant

Applications

  • Switched-mode power supplies
  • UPS
  • Induction heaters
  • Welding equipment
  • DC/DC converters
  • Solar inverters
  • EV charging stations

Specifications

  • TO-247-2L package
  • 1700VDC blocking voltage
  • 515nC total capacitive charge Qc
  • 50A rating IF
  • -55°C to +175°C operating junction temperature range

Package

Chart - SemiQ GP3D050B170B QSiC™ 1700V SiC Schottky Diode
Inilathala: 2024-06-13 | Na-update: 2024-08-27