STMicroelectronics STGWT28IH125DF Trench Gate Field-Stop IGBT
STMicroelectronics STGWT28IH125DF Trench Gate Field-Stop IGBTs feature an advanced proprietary trench gate field-stop structure. Performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. STMicroelectronics STGWT28IH125DF IGBTs maximize efficiency for any resonant and soft-switching application.
Features
- Designed for soft commutation only
- +175°C maximum junction temperature
- Minimized tail current
- 2.0V (typ.) collector-emitter voltage @ IC= 25A
- Tight parameters distribution
- Safe paralleling
- Low VF soft recovery co-packaged diode
- Low thermal resistance
- Lead-free package
Applications
- Induction heating
- Microwave ovens
- Resonant converters
Schematic Diagram
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Inilathala: 2015-02-03
| Na-update: 2022-03-11