Toshiba π-MOS VI MOSFETs
Toshiba π-MOS VI MOSFETs are Low Voltage Gate Drive devices offered in both P-channel and N-channel polarity and in single- and dual-channel variants. These devices provide a high drain current rating, low capacitance, low on-resistance, and fast switching. The π-MOS VI MOSFETs drive a 2.5V minimum to 20V maximum gate voltage. Toshiba π-MOS VI MOSFETs are offered in CST3-3, ES6-6, SOT-323-3, SOT-346-3, SOT-353-5, SOT-363-6, SOT-416-3, SOT-553-5, SOT-723-3, SOT-883-3, and TO-263MOD-3 package types for design flexibility. These small surface-mounted packages are ideal for high-density applications.
Features
- Low-voltage gate drive
- N-channel and P-channel polarity
- 1.2mΩ to 12mΩ (@VGS = 4V) maximum drain-source on-resistance (RDS(ON))
- ±-20V, ±30V drain-source voltage (VDSS)
- ±10V, ±-20V gate-source voltage (VGSS)
- -0.1A to 0.5A drain current (ID)
- 0.1W to 0.3W power dissipation (PD)
- 7.8pF to 70pF input capacitance (CISS):
Applications
- Analog Switching
- High-Speed Switching
Application Notes
- Bipolar Transistors: Electrical Characteristics
- Bipolar Transistors: Maximum Ratings
- Bipolar Transistors: Terms
- Bipolar Transistors: Thermal Stability and Design
- Calculating the Temperature of Discrete Semiconductor Devices
- Derating of the MOSFET Safe Operating Area
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 1
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 2
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 3
- IGBTs (Insulated Gate Bipolar Transistors)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Drive Circuit
- MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs)
- MOSFET Self-Turn-On Phenomenon
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFETs: Maximum Ratings
Inilathala: 2019-10-02
| Na-update: 2023-12-12