Toshiba π-MOS VII MOSFETs
Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.
Features
- 10V gate drive
- 0.1Ω to 4.3Ω (@VGS = 10V) maximum drain-source on-resistance (RDS(ON))
- 250V to 650V drain-source voltage
- ±20V to ±30V gate-source voltage
- 2A to 20A drain current
- 30W to 102W power dissipation
- 380pF to 1100pF input capacitance
Applications
- Switched-mode power supplies
- AC adapters for notebook and desktop computers
- Flat panel displays
- Ballasts used in lighting
Application Notes
- Bipolar Transistors: Electrical Characteristics
- Bipolar Transistors: Maximum Ratings
- Bipolar Transistors: Terms
- Bipolar Transistors: Thermal Stability and Design
- Calculating the Temperature of Discrete Semiconductor Devices
- Derating of the MOSFET Safe Operating Area
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 1
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 2
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 3
- IGBTs (Insulated Gate Bipolar Transistors)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Drive Circuit
- MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs)
- MOSFET Self-Turn-On Phenomenon
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFETs: Maximum Ratings
Inilathala: 2019-10-02
| Na-update: 2025-04-30