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Vishay / Siliconix Si88xx 8V TrenchFET® Power MOSFETs

Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chip-scale package, in addition to the first n- and p-channel devices to offer on-resistance (RDS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package that occupies up to 36 % less board space than the next smallest chip-scale devices, yet offer comparable − and even lower − on-resistance (RDS(on)).

These Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs can be used for load switching in handheld devices, including smartphones, tablets, portable media players, and mobile computing devices. The Si88xx 8V TrenchFET® Power MOSFETs' ultra-thin 0.357mm profiles save valuable board space in these applications − enabling smaller, slimmer mobile products.

Features

  • Halogen-free according to IEC 61249-2-21 definition
  • TrenchFET® power MOSFET
  • Ultra small 0.8 mm x 0.8 mm outline
  • Low on-resistance
  • Typical ESD protection 1500 V HBM
  • Compliant to RoHS Directive 2002/95/EC

Applications

  • Cell phones, smartphones, tablet PCs, portable media players
  • Load switch for low voltage drop
  • Load switch for power lines
  • Load switch for low voltage gate drive

Related Product

Vishay / Siliconix TrenchFET® Gen IV MOSFETs

Offers an industry-low on-resistance down to 1.35mΩ at 4.5V.

Learn Moretungkol sa Vishay / Siliconix TrenchFET® Gen IV MOSFETs View Productskaugnay ng Vishay / Siliconix TrenchFET® Gen IV MOSFETs
View Results ( 2 ) Page
Numero ng Piyesa Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge Pd - Power Dissipation Datasheet
SI8823EDB-T2-E1 20 V 2.7 A 77 mOhms 17 nC 900 mW SI8823EDB-T2-E1 Datasheet
SI8802DB-T2-E1 8 V 3.5 A 54 mOhms 4.3 nC 900 mW SI8802DB-T2-E1 Datasheet
Inilathala: 2012-02-22 | Na-update: 2022-03-11