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onsemi NST807 General Purpose PNP Transistors

onsemi NST807 General Purpose PNP Transistors are designed for general-purpose switching and amplifier applications. The onsemi NST807 offers high performance and reliability, making it suitable for use in low-power circuits, signal processing, and general electronic applications. The transistor features a maximum collector-emitter voltage (VCE) of 40V and a maximum collector current (IC) of 3A, providing versatility for a range of designs. With its low saturation voltage and fast switching speeds, the NST807 is often chosen for high-efficiency circuits. Additionally, its compact DFN1010-3 package allows for space-efficient designs, making the NST807 an excellent choice for consumer electronics, automotive, and industrial applications. The device is engineered to deliver robust performance, with a well-defined characteristic curve that ensures stability and reliability in various environmental conditions.

Features

  • XDFNW3 wettable flank package for optimal Automated Optical Inspection (AOI)
  • NSV prefix for automotive and other applications requiring unique site and control change requirements, AEC-Q101 qualified and PPAP capable
  • Moisture Sensitivity Level (MSL) 1
  • Lead-free, Halogen-free/BFR-free, and RoHS-compliant

Applications

  • Switching circuits
  • Amplification circuits
  • Linear voltage regulation
  • Analog circuits
  • Inverter and oscillator circuits
  • Complementary push-pull circuits
  • Motor and load control
  • Power supply design

Specifications

  • -45VDC maximum collector-emitter/-base voltage
  • -5.0VDC maximum emitter-base voltage
  • 350mW total power dissipation at TA = +25°C, 2.8mW/°C derating above +25°C
  • Small signal
    • 360MHz typical transition frequency
    • 6pF typical output capacitance
    • 58pF typical input capacitance
    • 16k typical input impedance
    • 0.79dB typical noise figure
  • Switching characteristics
    • 10ns typical delay time
    • 14ns typical rise time
    • 300ns typical storage time
    • 51ns typical fall time
  • 500mA maximum continuous collector current, 1.0A peak
  • 145°C/W junction-to-ambient thermal resistance
  • -65°C to +150°C junction temperature range

Schematic

Schematic - onsemi NST807 General Purpose PNP Transistors

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Inilathala: 2025-02-26 | Na-update: 2025-03-04