ROHM Semiconductor RGSx0TSX2x Field Stop Trench IGBTs
ROHM Semiconductor RGSx0TSX2x Field Stop Trench IGBTs are 10µs SCSOA (Short Circuit Safety Operating Area) guaranteed Insulated Gate Bipolar Transistors, suitable for general inverter, UPS, PV inverters, and power conditioner applications. The RGSx0TSX2x IGBTs offer low conduction loss that contributes to reduced size and improved efficiency. These devices utilize original trench-gate and thin-wafer technologies. These technologies help achieve low collector-emitter saturation voltage (VCE(sat)) with reduced switching losses. These IGBTs provide increased energy savings in a variety of high voltage and high current applications.
The ROHM Semiconductor RGSx0TSX2x Field Stop Trench IGBTs are offered in a TO-247N package. The RGS80TSX2D, RGS30TSX2D, and RGS50TSX2D also feature an integrated Fast Recovery Diode (FRD).
Features
- 10μs short-circuit withstand time
- Built-in FRD fast and soft recovery diode (RGS80TSX2D, RGS30TSX2D, and RGS50TSX2D only)
- 1200V collector-emitter voltage (VCES)
- ±30V gate-emitter voltage (VGES)
- 1.7V collector-emitter saturation voltage (VCE(sat))
- 7V gate-emitter threshold voltage (VGE(th))
- -40°C to +175°C operating junction temperature range
- TO-247N package
- Pb-free and RoHS compliant
Applications
- General inverters
- UPS
- PV inverters
- Power conditioners
Related Products
ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs
Provide low conduction loss and low VCE(sat) with reduced switching losses.
Pin Layout
View Results ( 6 ) Page
| Numero ng Piyesa | Datasheet | Tuloy-tuloy na Collector Current sa 25 C | Pd - Power Dissipation |
|---|---|---|---|
| RGS30TSX2DGC11 |  |
30 A | 267 W |
| RGS50TSX2GC11 | |
50 A | 395 W |
| RGS80TSX2GC11 | |
80 A | 555 W |
| RGS30TSX2GC11 | |
30 A | 267 W |
| RGS80TSX2DGC11 | |
80 A | 555 W |
| RGS50TSX2DGC11 | |
50 A | 395 W |
Inilathala: 2021-03-17
| Na-update: 2022-03-11