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Vishay / Siliconix SiHG080N60E E Series Power MOSFETs

Vishay / Siliconix SiHG080N60E E Series Power MOSFETs feature reduced switching and conduction losses utilizing 4th generation E series technology. The SiHG080N60E Power MOSFETs have a 650V drain-source voltage 63nC total gate charge in a TO-247AC package. The SiHG080N60E MOSFETs offer a low figure-of-merit (FOM) Ron x Qg and a low effective capacitance (Co(er)).

The Vishay / Siliconix SiHG080N60E E Series Power MOSFETs are ideal for server, telecom power, switch mode (SMPS), and power factor correction (PFC) power supplies.

Features

  • 4th generation E series technology
  • Low figure-of-merit (FOM) Ron x Qg
  • Low effective capacitance (Co(er))
  • Reduced switching and conduction losses
  • Avalanche energy rated (UIS)

Applications

  • Server and telecom power supplies
  • Switch mode power supplies (SMPS)
  • Power factor correction power supplies (PFC)
  • Lighting
    • High-intensity discharge (HID)
    • Fluorescent ballast lighting
  • Industrial
    • Welding
    • Induction heating
    • Motor drives
    • Battery chargers
    • Solar (PV inverters)

Associated Products

Vishay Semiconductors 4th Gen E Series MOSFETs

Feature low FOM, low effective capacitance, and reduced switching as well as conduction losses.

Learn Moretungkol sa Vishay Semiconductors 4th Gen E Series MOSFETs View Productskaugnay ng Vishay Semiconductors 4th Gen E Series MOSFETs

Vishay / Siliconix E Series High Voltage MOSFETs

Offers a 30% reduction in specific On-resistance versus the Vishay S Series Power MOSFETs.

Learn Moretungkol sa Vishay / Siliconix E Series High Voltage MOSFETs View Productskaugnay ng Vishay / Siliconix E Series High Voltage MOSFETs

Circuit Diagram

Application Circuit Diagram - Vishay / Siliconix SiHG080N60E E Series Power MOSFETs
Inilathala: 2021-03-10 | Na-update: 2022-03-11