Vishay General Semiconductor V8PAM10S Trench MOS Barrier Schottky Rectifiers
Vishay General Semiconductor V8PAM10S Trench MOS Barrier Schottky (TMBS) Rectifiers feature 100V maximum repetitive peak reverse voltage and 90A maximum peak forward surge current in an SMPA (DO-221BC) case. These low-profile rectifiers are ideally suited for automated placement and utilize Vishay's Trench MOS Schottky technology. Additional features include low forward voltage drop, low power losses, and high-efficiency operation. Vishay V8PAM10S Trench MOS Barrier Schottky Rectifiers are AEC-Q101 qualified, making them ideal for high-frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial and automotive applications.
Features
- Low profile - typical height of 0.95mm
- Ideal for automated placement
- Trench MOS Schottky technology
- Low power losses, high efficiency
- Low forward voltage drop
- Meets MSL level 1, per J-STD-020, LF maximum peak of +260°C
- AEC-Q101 qualified available, ordering code: P/NHM3
Applications
- High frequency inverters
- Freewheeling
- DC/DC converters
- Polarity protection
Specifications
- 100V maximum repetitive peak reverse voltage (VRRM)
- 90A maximum average forward rectified current rating (IF(AV))
- SMPA (DO-221BC) case
- Molding compound meets UL 94V-0 flammability rating
- Base P/NHM3 - halogen free, RoHS compliant, and AEC-Q101 qualified
- Base P/N-M3 - halogen free and RoHS compliant
- Matte tin-plated leads, solderable per J-STD-002 and JESD22-B102 terminals
- M3 and HM3 suffixes meet JESD 201 class 2 whisker test
- Color band denotes cathode end for polarity
Related Rectifiers
Vishay General Semiconductor eSMP® SMPA Schottky Rectifiers
Offers diminished minority carrier injections to the drift region, thus minimizes stored charges.
Inilathala: 2020-06-11
| Na-update: 2025-01-08